Samsung Electronics Co., Ltd.

Snu Rdb Foundation

Anass Benayad

Eun-ha Lee

Jong Jin Park

Sang-Wook Kim

Dong-min Im

Chang-seung Lee

Jusik Kim

Wonseok Chang

Victor Roev

Jae-cheol Lee

Tae-sang Kim

Xavier Bulliard

Ryounghee Kim

Kyoung-seok Son

Seoksoo Lee

Dongwook Han

Yun Hyuk Choi

Se-Jung Oh

Jae Cheol Lee

Dong-Min Im

Jae-gwan Chung

An electrode active material including a vanadium oxide represented by Formula 1,VO&#x2003;&#x2003;Formula 1

Active material, method of preparing the active material electrode including the active material, and secondary battery including the electrode

A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnON). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.

Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device

A porous carbonaceous composite material, a positive electrode and lithium air battery including the porous carbonaceous composite material, and a method of preparing the porous carbonaceous composite material. The porous carbonaceous composite material includes a carbon nanotube (CNT); and a modified carbonaceous material doped with a heterogeneous element, wherein the ratio of the number of surface oxygen atoms to the number of surface carbon atoms ranges upward from about 2 atom %.

Porous carbonaceous composite material, positive electrode and lithium air battery including the material, and method of preparing the material

Disclosed herein is a nanostructured thin film. The nanostructured thin film comprises a nanoparticle layer and a number of micro-undulated surfaces formed on the nanoparticle layer. The two micro-undulated structures of the nanostructured thin film are uniformly introduced over a large area. This configuration makes it easy to control the surface properties of the nanostructured thin film. Therefore, the nanostructured thin film can be widely applied to a variety of devices. Also disclosed herein is a method for controlling the surface properties of the nanostructured thin film.

Nanostructured thin film and method for controlling surface properties thereof

Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

Transistors and electronic apparatuses including same

Growing community of inventors

Yongin-si, South Korea

Anass Benayad