Ramat Gan, Israel

Amit Berman

This inventor holds 60 USPTO granted patents and 8 published patent applications and 2 EPO patents, primarily in Error Correction Codes. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2017-2026.

USPTO Granted Patents = 60 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.3

ph-index = 4

Forward Citations = 50(Granted Patents)

Forward Citations (Not Self Cited) = 30(Dec 10, 2025)


Location History:

  • Tel Aviv, IL (2023)
  • Ramat Gan, IL (2017 - 2024)
  • Binyamina, IL (2021 - 2024)
  • Haifa, IL (2022 - 2024)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Error Correction Codes
Machine Learning
NAND Flash
Polar Codes
Generalized LDPC
ECC Throughput
Data Modulation
Neural Networks
Anti-Malware
SSD Health
Voltage Selection
Threshold Estimation
60 patents (USPTO):Explore Patents

Title: Inventor Amit Berman: Revolutionizing Technology in Ramat-Gan

Introduction: Amit Berman is a visionary inventor based in Ramat-Gan, Israel, known for his groundbreaking contributions to the field of technology.

Latest Patents: Berman holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Berman has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the world of innovation.

Collaborations: Throughout his career, Berman has collaborated with top scientists, engineers, and researchers globally, fostering a culture of creativity and excellence in all his projects.

Conclusion: Amit Berman's relentless pursuit of innovation and his passion for creating technology that makes a difference continue to inspire the next generation of inventors and entrepreneurs worldwide.

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