IDiyas

For the Inventor, By the Inventor

Ramat Gan, Israel

Amit Berman

USPTO Granted Patents = 53 

Average Co-Inventor Count = 2.2

ph-index = 3

Forward Citations = 34(Granted Patents)

Forward Citations (Not Self Cited) = 28(Oct 12, 2025)


Location History:

  • Tel Aviv, IL (2023)
  • Ramat Gan, IL (2017 - 2024)
  • Binyamina, IL (2021 - 2024)
  • Haifa, IL (2022 - 2024)

Company Filing History:

goldMedal53 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2017-2025

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53 patents (USPTO):Explore Patents
1. 12488847 - Reviving faulty NAND by AI data modulation (2025-12-02),
2. 12413252 - Fast combined chase and GMD decoding of generalized Reed-Solomon codes (2025-09-09),
3. 12394486 - Setting optimal threshold voltages for reading data from a memory device based on a channel distribution (2025-08-19),
4. 12388468 - Generalized hierarchical concatenated codes with fixed dimension and code length (2025-08-12),
5. 12267086 - High throughput polar codeword decoding by decoding bch sub-code in polar code structure (2025-04-01),
6. 12231148 - Acceleration of S-polar ECC throughput by scheduler (2025-02-18),
7. 12224769 - Fast polynomial division by monomial for Reed-Solomon ELP maintenance (2025-02-11),
8. 12143123 - Encoding and decoding of data using generalized LDPC codes (2024-11-12),
9. 12119840 - Machine-learning error-correcting code controller (2024-10-15),
10. 12094544 - Programming by self adjusting program voltage targets compensating for cell-to-cell interference and PE cycles (2024-09-17),
11. 12046299 - De-noising using multiple threshold-expert machine learning models (2024-07-23),
12. 12040033 - ECC buffer reduction in a memory device (2024-07-16),
13. 11942965 - Soft reed-solomon decoder for a non-volatile memory (2024-03-26),
14. 11915766 - Automatic program voltage selection network (2024-02-27),
15. 11855772 - High throughput polar ECC decoding via compressed successive cancellation algorithm (2023-12-26),

Title: Inventor Amit Berman: Revolutionizing Technology in Ramat-Gan

Introduction: Amit Berman is a visionary inventor based in Ramat-Gan, Israel, known for his groundbreaking contributions to the field of technology.

Latest Patents: Berman holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Berman has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the world of innovation.

Collaborations: Throughout his career, Berman has collaborated with top scientists, engineers, and researchers globally, fostering a culture of creativity and excellence in all his projects.

Conclusion: Amit Berman's relentless pursuit of innovation and his passion for creating technology that makes a difference continue to inspire the next generation of inventors and entrepreneurs worldwide.

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