The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jun. 04, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Amit Berman, Tel Aviv, IL;

Karen Michaeli, Tel Aviv, IL;

Evgeny Blaichman, Tel Aviv, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/04 (2006.01); G11C 11/408 (2006.01); G11C 11/4093 (2006.01); G11C 11/4096 (2006.01); G11C 11/54 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4085 (2013.01); G11C 11/4093 (2013.01); G11C 11/54 (2013.01);
Abstract

A storage device, including a volatile memory; a non-volatile memory; and a storage controller: wherein, based on detecting a power loss corresponding to the storage device, the storage controller is configured to: obtain a word stored in the volatile memory; write the word to a first word line; compare a number of unprogrammed cells to a first threshold number and a second threshold number, wherein the unprogrammed cells correspond to remainder data; based on determining that the number of unprogrammed cells is less than or equal to the first threshold number and greater than the second threshold number, determine whether to continue writing the word to the first word line by providing information about the first word line to a machine learning model; and based on determining not to continue writing the word to the first word line, write the remainder data to a second word line.


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