Hsinchu, Taiwan

Alexey R Kovsh

This inventor holds 2 USPTO granted patents. Top assignee: Industrial Technology Research Institute. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Alexey R Kovsh. Retrieved from https://idiyas.com/inventor/alexey-r-kovsh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2006

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2 patents (USPTO):Explore Patents

Title: Alexey R Kovsh: Innovator in Laser Technology

Introduction

Alexey R Kovsh is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of laser technology, holding 2 patents that showcase his innovative approach to engineering and design.

Latest Patents

One of his latest patents is titled "Edge emitting laser with circular beam." This invention utilizes a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer. The low-carrier-mobility material effectively suppresses surface recombination of carriers. The epitaxy structure established on the substrate surface includes a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material, and etching is performed through the light-emitting layer to create a ridge waveguide with a significant reflective index difference between the light-emitting layer and the dielectric passivation layer.

Another notable patent is "Resonant cavity device array for WDM application and the fabrication method of the same." This specification discloses a resonant cavity device array designed for wavelength division multiplexing. The structure of the resonant cavity device is selectively formed with an oxide structure that contains multiple AlGaAs oxide tuning layers. The oxidation of AlGaAs results in the formation of AlGaO, which alters the refractive index and thickness, allowing for the control of the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses, and compositions of the AlGaAs oxide tuning layer within the selective oxide structure.

Career Highlights

Alexey R Kovsh is currently employed at the Industrial Technology Research Institute, where he continues to push the boundaries of laser technology. His work has garnered attention for its innovative applications and potential impact on various industries.

Collaborations

He has collaborated with notable colleagues, including Jyh-Shyang Wang and Yi-Tsuo Wu, contributing to advancements in their respective fields.

Conclusion

Alexey R Kovsh is a distinguished inventor whose work in laser technology has led to significant advancements and innovations. His patents reflect a deep understanding of semiconductor materials and their applications in modern technology

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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