The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Dec. 23, 2003
Jyh-shyang Wang, Hsinchu, TW;
Gray Lin, Hsinchu, TW;
Alexey R Kovsh, Hsinchu, TW;
Daniil Alexandrovich Livshits, Hsinchu, TW;
Jyh-Shyang Wang, Hsinchu, TW;
Gray Lin, Hsinchu, TW;
Alexey R Kovsh, Hsinchu, TW;
Daniil Alexandrovich Livshits, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
An edge emitting laser with circular beam using a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer is disclosed. The low-carrier-mobility material can greatly suppress surface recombination of carriers. The epitaxy structure established on the substrate surface includes, from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material. Etching is performed from the epitaxy structure through the light-emitting layer, forming a ridge waveguide that has a large reflective index difference between the light-emitting layer and the dielectric passivation layer.