The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Mar. 25, 2003
Jyh-shyang Wang, Taoyuan, TW;
Yi-tsuo Wu, Taipei, TW;
Nikolai A. Maleev, Hsinchu, TW;
Alexey V. Sakharov, Hsinchu, TW;
Alexey R. Kovsh, Hsinchu, TW;
Jyh-Shyang Wang, Taoyuan, TW;
Yi-Tsuo Wu, Taipei, TW;
Nikolai A. Maleev, Hsinchu, TW;
Alexey V. Sakharov, Hsinchu, TW;
Alexey R. Kovsh, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu Hsien, TW;
Abstract
The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlGaAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlGaAs oxide tuning layer contained in the selective oxide structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile