Davis, CA, United States of America

Alexandra Navrotsky


Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2005-2006

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2 patents (USPTO):Explore Patents

Title: Alexandra Navrotsky: Innovator in Semiconductor Technology

Introduction

Alexandra Navrotsky is a prominent inventor based in Davis, CA (US). She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative approach to materials science.

Latest Patents

Her latest patents include advancements in semiconductor structures and methods of fabricating these structures. One patent focuses on semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof. This invention provides a semiconductor structure that includes an amorphous layer of hafnium oxide overlying a substrate, with a lanthanum-containing dopant incorporated within the hafnium oxide layer. The process involves growing this amorphous layer and doping it with a chemical formulation that enhances its properties. Another patent details methods for selectively removing organic compounds from nano-composite materials, utilizing electromagnetic radiation to achieve this goal.

Career Highlights

Throughout her career, Alexandra has worked with esteemed organizations such as the University of California and Freescale Semiconductor, Inc. Her work has significantly impacted the development of semiconductor technologies and materials.

Collaborations

She has collaborated with notable colleagues, including Atul Navinchandra Parikh and Zhiyi Jimmy Yu, contributing to various research projects and innovations in her field.

Conclusion

Alexandra Navrotsky's contributions to semiconductor technology and her innovative patents highlight her role as a leading inventor in the industry. Her work continues to influence advancements in materials science and engineering.

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