University of California

Freescale Semiconductor,inc.

Alexandra Navrotsky

Bich-Yen Nguyen

Zhiyi Jimmy Yu

Alexander A Demkov

Yong Liang

Jay A Curless

Atul Navinchandra Parikh

Sergey Ushakov

Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnO, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.

Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof

The present invention provides methods for selectively removing organic compound from a nano-composite material which comprises the organic compound that is dispersed within a solid inorganic compound structure. In particular, methods of the present invention comprise irradiating the nano-composite material with electromagnetic radiation wavelength that is shorter than the wavelength of visible light.

Methods for removing organic compounds from nano-composite materials

Growing community of inventors

Davis, CA, United States of America

Alexandra Navrotsky