Alexandra Krawicz

Title: Alexandra Krawicz: Semiconductor Patterning Inventor

Introduction

Alexandra Krawicz is an inventor associated with Albany, New York, and Tokyo Electron Limited. Her patent work focuses on semiconductor manufacturing and the precise patterning of substrate materials.

Latest Patents

Krawicz is credited with 1 patent, titled “Patterning a Semiconductor Substrate.” The invention describes a method for forming a semiconductor device by receiving a substrate in a processing chamber. The substrate has a first patterned layer containing a metal-based material. A gaseous etch process trims that layer to form a second patterned layer, using an un-ionized gas that includes a halogen compound.

Career Highlights

Krawicz’s patent reflects work on semiconductor fabrication processes, particularly techniques for modifying patterned layers during device manufacturing. Her association with Tokyo Electron Limited connects her work to a company active in semiconductor production equipment and processes.

Collaborations

Krawicz’s listed coworkers include Steven Grzeskowiak and Eric Chih-Fang Liu. Their shared association provides context for the professional network surrounding her patent work.

Conclusion

Alexandra Krawicz’s patent documents a semiconductor patterning method that uses a halogen-containing gaseous etch process to trim a metal-based layer, highlighting her contribution to semiconductor manufacturing innovation.