The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Aug. 16, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Alexandra Krawicz, Albany, NY (US);
Steven Grzeskowiak, Albany, NY (US);
Eric Chih-Fang Liu, Albany, NY (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 76/40 (2026.01); G03F 7/004 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); H10P 50/00 (2026.01);
U.S. Cl.
CPC ...
H10P 76/4088 (2026.01); H10P 50/73 (2026.01); G03F 7/0042 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/2004 (2013.01);
Abstract
A method of forming a semiconductor device, where the method includes receiving a substrate in a processing chamber, the substrate including a first patterned layer including a metal-based material; and with a gaseous etch process, trimming the first patterned layer to form a second patterned layer, the gaseous etch process including exposing the first patterned layer to an un-ionized gas including a halogen compound.