This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Micron Technology Incorporated. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Alex Joseph Kozlosky and Resilient Memory Design.
Introduction
Alex Joseph Kozlosky is an inventor associated with Micron Technology Incorporated and based in Decatur, Georgia. His patent work addresses memory-circuit design, with a focus on improving the resilience of dual-interlocked cell (DICE) latches.
Latest Patents
Kozlosky is credited with 1 patent: “Staggered Write Control for Dual-Interlocked Cells.” The invention describes a memory device with a DICE latch and upstream circuitry that divides a control signal into two paths. A delay in the second path staggers signal propagation, helping reduce the risk that a potential neutron strike at or before the common node will affect the latch.
Career Highlights
Kozlosky’s listed patent reflects work on memory reliability and circuit-level techniques for protecting data storage elements. His association with Micron Technology Incorporated places this work within the broader field of semiconductor memory innovation.
Collaborations
The available information identifies Micron Technology Incorporated as Kozlosky’s company but does not specify individual collaborators or other organizations involved in the patent.
Conclusion
Alex Joseph Kozlosky’s patent on staggered write control presents a circuit-design approach intended to strengthen DICE latch resilience against potential neutron strikes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile