The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jul. 01, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hiroshi Akamatsu, Atlanta, GA (US);

Alex Joseph Kozlosky, Decatur, GA (US);

Assignee:

Micron Technology, inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4076 (2006.01); G11C 11/4093 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4076 (2013.01); G11C 11/4093 (2013.01); G11C 11/4096 (2013.01);
Abstract

Systems and methods include a memory device that includes a dual-interlocked cell (DICE) latch and upstream circuitry coupled to the DICE latch and including a common node configured to receive a control signal for an operation for the DICE latch. The upstream circuitry also includes a first divided control path coupled to common node and configured to generate a first divided control signal from the control signal. The upstream circuitry comprises a second divided control path coupled to the common node and configured to generate a second divided control signal from the control signal. The second divided control path includes a delay configured to delay the second divided control signal to stagger propagation of a potential neutron strike at the common node or upstream of the common node from the DICE latch.


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