Company Filing History:

24 out of 37,920

Micron Technology Incorporated

patents

1 out of 29,245

Texas Instruments Corporation

patents

Years Active: 2000-2019

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25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10515696 - Apparatuses and methods for determining stability of a memory cell (2019-12-24),

2. 9419220 - Resistive memory elements, resistive memory cells, and resistive memory devices (2016-08-16),

3. 9112138 - Methods of forming resistive memory elements (2015-08-18),

4. 8891309 - Reducing read failure in a memory device (2014-11-18),

5. 8859329 - Memory cells and methods of forming memory cells (2014-10-14),

6. 8787065 - Apparatuses and methods for determining stability of a memory cell (2014-07-22),

7. 8753919 - Memory cells and methods of forming memory cells (2014-06-17),

8. 8705290 - Memory device having improved programming operation (2014-04-22),

9. 8629421 - Memory cells (2014-01-14),

10. 8610490 - Voltage switching in a memory device (2013-12-17),

11. 8565018 - Reducing effects of erase disturb in a memory device (2013-10-22),

12. 8451661 - Programming methods and memories (2013-05-28),

13. 8405444 - Voltage switching in a memory device (2013-03-26),

14. 8331160 - Memory device having improved programming operation (2012-12-11),

15. 8217705 - Voltage switching in a memory device (2012-07-10),

Title: Innovations and Achievements of Alessandro Torsi

Introduction

Alessandro Torsi, an accomplished inventor based in Avezzano, Italy, has made significant contributions to the field of memory technology. With 25 patents to his name, Torsi has become a prominent figure in the realm of resistive memory devices and stability assessment methods for memory cells.

Latest Patents

Among his latest innovations, Torsi developed techniques for assessing the stability of memory cells. The described apparatuses and methods can determine the stability by applying a pulse to a memory cell that had been previously set to either a low or high resistance state. If the memory cell fails to maintain its target state after applying this new pulse, additional corrective pulses can be utilized to ensure stability. His work also includes methods for forming resistive memory elements, which involve creating an oxide material over a first electrode, treating it through a plasma process, and forming a second electrode thereafter. These advancements contribute significantly to the efficiency and reliability of resistive memory cells and devices.

Career Highlights

Throughout his career, Torsi has worked with esteemed companies including Micron Technology Incorporated and Texas Instruments Corporation. His innovative contributions have not only advanced memory technologies but also positioned him as a leader in the field.

Collaborations

Alessandro Torsi has collaborated with notable professionals in the industry, including Carlo Musilli and Durai Vishak Nirmal Ramaswamy. These collaborations have enriched his projects, fostering innovation through shared expertise and insights.

Conclusion

Alessandro Torsi continues to be a driving force behind advancements in memory technology. His numerous patents and collaborative efforts showcase his commitment to pushing the boundaries of innovation in resistive memory solutions. As the technology landscape evolves, Torsi's contributions will undoubtedly play a vital role in shaping the future of memory devices.

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