This inventor holds 3 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Centre National De La Recherche Scientifique, Intel Corporation, Intel Deutschland Gmbh. Active years: 2015-2016.
Company Filing History:
1 out of 5,383 
1 out of 56,240 
1 out of 254 
Years Active: 2015-2016
Title: Alberto Bosio: Innovator in SRAM Testing and Voltage Control
Introduction
Alberto Bosio is a notable inventor based in Montpellier, France. He has made significant contributions to the field of integrated circuits, particularly in SRAM testing and adaptive voltage scaling mechanisms. With a total of 3 patents, his work has had a substantial impact on low-power memory technologies.
Latest Patents
One of Bosio's latest patents is focused on assist circuits for SRAM testing. These circuits enable voltage scaling in low-power SRAMs, enhancing read stability and write margin through techniques such as word line level reduction (WLR) and negative bit line (NBL) boost. The assist circuits are selectively activated at specific points in the memory cell circuit to identify potential defects that may not be apparent until they reach a significant size. A March test is employed to activate these circuits, helping to identify defects and indicate functional fault models (FFMs) associated with them.
Another significant patent involves an adaptive voltage scaling mechanism based on voltage shoot measurement. This device controls the power supply for a functional block in an integrated circuit. It includes a signal generator that provides a clock signal, an antenna with a transistor located near the functional block, and feedback mechanisms to adjust the voltage of the power supply based on the measured clock signal output.
Career Highlights
Throughout his career, Bosio has worked with prominent companies such as Intel Corporation and ST-Ericsson. His experience in these organizations has allowed him to develop innovative solutions that address critical challenges in integrated circuit design and functionality.
Collaborations
Bosio has collaborated with notable professionals in the field, including Patrick Girard and Nabil Badereddine. These collaborations have contributed to the advancement of technology in SRAM testing and voltage control.
Conclusion
Alberto Bosio's contributions to the field of integrated circuits, particularly in SRAM testing and voltage control, highlight his innovative spirit and technical expertise. His patents reflect a commitment to enhancing the performance and reliability of low-power memory technologies.