Hsinchu, Taiwan

Albert Yao

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2008.


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Albert Yao: Innovator in Semiconductor Technology

Introduction

Albert Yao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and structures. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Albert Yao holds a patent for an LDPMOS structure with enhanced breakdown voltage. This semiconductor structure includes a first well region of a first conductivity type overlying a substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first well region. Additionally, it features a third well region of the second conductivity type adjacent and spaced apart from the first well region, along with a first deep well region of the second conductivity type underlying at least portions of the first and the second well regions. The design also incorporates a second deep well region of the second conductivity type underlying the third well region and spaced apart from the first deep well region, an insulation region in the first well region, a gate dielectric extending from over the insulation region to over the second well region, and a gate electrode on the gate dielectric. This patent showcases his innovative approach to enhancing semiconductor performance.

Career Highlights

Albert Yao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role at the company allows him to work on cutting-edge technologies and contribute to the development of advanced semiconductor solutions.

Collaborations

Throughout his career, Albert has collaborated with notable colleagues, including Pai-Kang Hsu and Robin Hsieh. These collaborations have fostered a productive environment for innovation and have led to significant advancements in their respective fields.

Conclusion

Albert Yao is a distinguished inventor whose work in semiconductor technology has made a lasting impact. His patent for the LDPMOS structure with enhanced breakdown voltage exemplifies his commitment to innovation. Through his career at Taiwan Semiconductor Manufacturing Company Limited, he continues to push the boundaries of semiconductor design and technology.

Profile summary based on public USPTO records.
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