This inventor holds 1 USPTO granted patent. Top assignee: Agence Nationale De Valorisation De La Recherche (Anvar). Active years: 1981.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1981
Title: Albert Lebugle: Innovator in Semiconductor Technology
Introduction
Albert Lebugle is a notable inventor based in Toulouse, France. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique process for depositing III-V semiconductor layers on substrates.
Latest Patents
Lebugle holds a patent for a process that involves depositing a layer of a semiconductor composition comprising elements M(III) and M'(V). This process includes contacting the substrate with a coordination compound in the gaseous phase. The compound is designed to stabilize the donor/acceptor bond between the elements, allowing for effective deposition without breaking essential chemical bonds. His patent is a significant advancement in semiconductor technology.
Career Highlights
Albert Lebugle is associated with the Agence Nationale De Valorisation De La Recherche (ANVAR). His work at this institution has allowed him to focus on innovative research and development in semiconductor processes. Lebugle's expertise has positioned him as a key figure in the advancement of semiconductor technologies.
Collaborations
Lebugle has collaborated with notable colleagues such as Georges Constant and Raymond Haran. These partnerships have contributed to the success of his research and the development of his patented processes.
Conclusion
Albert Lebugle's contributions to semiconductor technology through his innovative processes and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile