Agence Nationale De Valorisation De La Recherche (anvar)

Albert Lebugle

Roland Morancho

Georges Constant

Aref Zaouk

Philippe Pouvreau

Raymond Haran

A process for depositing a layer of a semiconductor composition comprising elements M(III) and M'(V) selected from group III and group V elements, respectively onto a substrate. The process comprises: contacting the substrate with a coordination compound in the gaseous phase, the compound having the formula: ##STR1## wherein M(III) and M'(V) are bonded to one another by a donor/acceptor bond and wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, and R.sub.6 are chemical radicals other than hydrogen with at least one of the radicals R.sub.1, R.sub.2, and R.sub.3 being an electron donor serving to stabilize the donor/acceptor bond between elements M(III) and M'(V). The process further comprises decomposing the coordination compound so as to break the chemical bonds between the radicals and the elements M(III) and M'(V) without breaking the donor/acceptor bond, so as to cause the semi-conductor composition to deposit onto the substrate. Substrates having a semi-conductor layer comprising elements selected from groups III and V deposited by the process of the invention are also disclosed.

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Toulouse, France

Albert Lebugle