Alban Gassenq

Title: Alban Gassenq: Innovator in Semiconductor Structures

Introduction

Alban Gassenq is a notable inventor based in Saint-Hilaire, France. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative semiconductor structures and methods of production that enhance the performance and efficiency of electronic devices.

Latest Patents

Gassenq's latest patents include a semiconductor structure that features a suspended membrane containing a central segment of structured thickness. This invention involves a semiconductor layer made of a crystalline semiconductor compound, where a portion of the layer forms a suspended membrane above a carrier layer. The suspended membrane is designed with a tensilely stressed central segment and several lateral segments that act as tensioning arms. Additionally, he has developed a method for producing a semiconducting structure that includes a strained portion. This method involves creating a cavity beneath a structured part to strain a central portion by lateral portions, followed by molecular bonding with a support layer.

Career Highlights

Throughout his career, Alban Gassenq has worked with prominent organizations, including the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His experience in these institutions has allowed him to advance his research and contribute to the development of cutting-edge semiconductor technologies.

Collaborations

Gassenq has collaborated with notable colleagues such as Vincent Reboud and Vincent Calvo. These partnerships have fostered innovation and have been instrumental in the advancement of his projects.

Conclusion

Alban Gassenq's work in semiconductor structures showcases his dedication to innovation in technology. His patents and collaborations reflect his significant impact on the field, making him a key figure in semiconductor research.