The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Aug. 02, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Vincent Reboud, Paris, FR;
Alban Gassenq, Saint-Hilaire, FR;
Samuel Tardif, Grenoble, FR;
Vincent Calvo, Fontaine, FR;
Alexei Tchelnokov, Meylan, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/10 (2006.01); H01S 5/30 (2006.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3427 (2013.01); B81B 3/0086 (2013.01); B81C 1/00158 (2013.01); H01S 5/1071 (2013.01); H01S 5/3027 (2013.01); B81B 2203/0127 (2013.01); H01S 5/30 (2013.01);
Abstract
A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.