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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9774167 B1

PDFFull Text
Date of Patent:
Sep. 26, 2017

Filed:

Sep. 30, 2016

Method of production of a semiconducting structure comprising a strained portion

Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Alban Gassenq, Saint-Hilaire, FR;

Vincent Reboud, Paris, FR;

Kevin Guilloy, Grenoble, FR;

Vincent Calvo, Fontaine, FR;

Alexei Tchelnokov, Meylan, FR;

Assignee:

Commissariat A l'Energie Atomique et aux Energies Alternatives, Paris, FR;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Marvin Payen

Assistant Examiner:

Jeremy Joy

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01S 5/32 (2006.01); H01S 5/12 (2006.01); H01L 33/10 (2010.01); H01L 33/26 (2010.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 33/20 (2010.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3201 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/823412 (2013.01); H01L 29/1054 (2013.01); H01L 29/7842 (2013.01); H01L 33/0008 (2013.01); H01L 33/0012 (2013.01); H01L 33/0054 (2013.01); H01L 33/0095 (2013.01); H01L 33/105 (2013.01); H01L 33/20 (2013.01); H01L 33/26 (2013.01); H01S 5/12 (2013.01); H01S 5/3223 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Find Patent Forward Citations

Gassenq, Alban. (2017). Method of production of a semiconducting structure comprising a strained portion (U.S. Patent No. 9774167). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9774167

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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