The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Sep. 30, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Vincent Reboud, Paris, FR;
Alban Gassenq, Saint-Hilaire, FR;
Kevin Guilloy, Grenoble, FR;
Vincent Calvo, Fontaine, FR;
Alexei Tchelnokov, Meylan, FR;
Abstract
The invention pertains to formation of a semiconducting portion () by epitaxial growth on a strained germination portion (), comprising the steps in which a cavity () is produced under a structured part () by rendering free a support layer () situated facing the structured part (), a central portion (), termed the strained germination portion, then being strained; and a semiconducting portion () is formed by epitaxial growth on the strained germination portion (), wherein the structured part () is furthermore placed in contact with the support layer () in such a way as to bind the structured part () of the support layer.