Jericho, VT, United States of America

Alan L Roberts


Average Co-Inventor Count = 3.1

ph-index = 7

Forward Citations = 124(Granted Patents)


Location History:

  • Jerico, VT (US) (2001 - 2002)
  • Jericho, VT (US) (1996 - 2005)

Company Filing History:


Years Active: 1996-2005

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12 patents (USPTO):Explore Patents

Title: Alan L Roberts: Innovator in Semiconductor Technology

Introduction

Alan L Roberts is a prominent inventor based in Jericho, Vermont, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Roberts has made notable advancements in the field, particularly in electro-static discharge protection and power reduction techniques.

Latest Patents

Roberts' latest patents include an innovative electro-static discharge protection circuit. This circuit features multiple inverters, an RC network, a clamping device, and a feedback device, all working together to enhance ESD protection. Additionally, he has developed a sleep mode VDD detune for power reduction, which effectively reduces leakage current in semiconductors while in sleep mode. This is achieved by adjusting the internal supply voltage based on the operational state of the semiconductor, ensuring efficient power management.

Career Highlights

Throughout his career, Alan L Roberts has been associated with the International Business Machines Corporation (IBM), where he has played a crucial role in advancing semiconductor technologies. His work has not only contributed to the company's innovation but has also set new standards in the industry.

Collaborations

Roberts has collaborated with notable coworkers, including James J Covino and Roy Childs Flaker, further enhancing the impact of his inventions through teamwork and shared expertise.

Conclusion

Alan L Roberts stands out as a key figure in the realm of semiconductor innovation, with a strong portfolio of patents that reflect his dedication to advancing technology. His contributions continue to influence the industry and pave the way for future developments.

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