This inventor holds 4 USPTO granted patents. Top assignee: Sony Corporation. Active years: 1976-1991.
Location History:
- Atsugi, JA (1976 - 1978)
- Kanagawa, JP (1991)
Company Filing History:
Years Active: 1976-1991
Title: Akiyasu Ishitani: Innovator in Semiconductor Technology
Introduction
Akiyasu Ishitani is a prominent inventor based in Atsugi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Ishitani's latest patents include innovative designs for semiconductor devices. One notable patent describes a semiconductor device, such as a GaAs FET, which operates with low noise and ultra-high frequency. This device features bonding pads for applying potential to the gate electrode, strategically placed outside the source region. This design allows for an increased number of supply points without extending the source region, thereby optimizing chip size. Another significant patent involves an insulated gate field effect transistor. This transistor is constructed with a drain region of a first conductivity type and a frame region of a second conductivity type. The design ensures efficient operation while maintaining a compact structure.
Career Highlights
Akiyasu Ishitani is currently employed at Sony Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced electronic components that are crucial for modern devices.
Collaborations
Ishitani has collaborated with notable colleagues, including Tsuneyoshi Aoki and Masayoshi Kanazawa. Their combined expertise has contributed to the success of various projects within the semiconductor field.
Conclusion
Akiyasu Ishitani's innovative contributions to semiconductor technology have established him as a key figure in the industry. His patents reflect a commitment to advancing electronic device performance and efficiency.