The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1991
Filed:
Sep. 21, 1988
Applicant:
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; 357 ; 357 ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 2314 ;
Abstract
A semiconductor device, such as a GaAs FET, has low-noise, ultra-high frequency operation. The semiconductor device has at least one bonding pad for applying potential to the gate electrode lying outside of the source region. In practice, one or more bonding pads are deposited in the general vicinity of the gate electrode and outside of the source region. This allows the number of supply points P to be increased without lengthening the source region and thus expanding the chip. With regard to the drain-gate capacitance, the bonding pad or pads can be surrounded by an electrode other than the drain region electrode or the gate electrode to ensure that the drain-gate capacitance is not increased.