The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1978
Filed:
Apr. 22, 1977
Akiyasu Ishitani, Atsugi, JA;
Sony Corporation, Tokyo, JA;
Abstract
An insulated gate field effect transistor is formed of a drain region of a first conductivity type which faces both of the major surfaces of a semiconductor substrate, a frame region of a second conductivity type which faces the one major surface of the semiconductor substrate, a base region of the second conductivity type which faces the one major surface and is connected to the frame region, a PN junction being formed between the base region and the drain region, and a source region of the first conductivity type which faces the one major surface and is formed in the base region as if being surrounded thereby. The insulated gate field effect transistor is also provided with a source electrode which short-circuits the frame region and the source region, a drain electrode which is provided on the drain region facing the other major surface of the substrate, and a gate electrode which is provided on the base region facing the one major surface through a gate insulating layer.