Location History:
- Tsukuba, JP (1998)
- Ibaraki, JP (1990 - 2002)
- Tsuchiura, JP (1996 - 2002)
- Plano, TX (US) (2002)
- Tokyo, JP (2003)
- Chiba, JP (2003 - 2004)
Company Filing History:
Years Active: 1990-2004
Title: **Akitoshi Nishimura: Innovator in Ferroelectric Memory Technology**
Introduction
Akitoshi Nishimura, located in Chiba, Japan, has made significant contributions to the field of ferroelectric memory technologies, holding a total of 19 patents. His innovative work focuses on enhancing memory device applications, particularly in the design and structure of ferroelectric capacitors.
Latest Patents
One of Nishimura's latest patents details a dummy cell structure for a 1T1C FeRAM cell array. This new ferroelectric memory structure provides an accurate reference voltage, enabling a simplified sensing scheme for the sense amplifier that reads the state of a target memory cell within the FeRAM array. The device's design incorporates a reference circuit that generates a reference voltage based on charge shared among multiple FeRAM dummy cells. This innovative setup allows for accurate reading of cell states by maintaining centered voltage references through selective coupling of dummy cells to bitlines, making it essential for efficient and reliable memory functions.
Career Highlights
Nishimura has developed multiple patents throughout his career that push the boundaries of memory technology. His work at Texas Instruments Corporation has been instrumental in advancing the performance and reliability of ferroelectric memories, establishing him as a respected figure in the industry.
Collaborations
Throughout his journey, Nishimura has collaborated with esteemed colleagues such as Katsuhiro Aoki and Yukio Fukuda. These partnerships have fostered innovation and have allowed for the cross-pollination of ideas that drive advancements in memory technology.
Conclusion
Akitoshi Nishimura's dedication to innovation in ferroelectric memory technology exemplifies the crucial role of inventors in shaping the future of electronics. His patents are not just milestones of technical achievement, but also critical contributions to the broader field of memory devices, paving the way for future advancements.