The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Dec. 11, 1997
Katsuhiro Aoki, Tsuchiura, JP;
Yukio Fukuda, Naka-gun, JP;
Ikuko Murayama, Richardson, TX (US);
Ken Numata, Dallas, TX (US);
Akitoshi Nishimura, Tsuchiura, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
To provide a method that can be used to form a high-qualility ferroelectric film by forming good nuclei when using the sputtering method to manufacture a PZT capacitor or other forroelectric capacitors using Ir or other electrode substances in addition to Pt for the electrode. In the method for manufacturing a PZT ferroelectric capacitor CAP, after titanium film,is deposited on Ir electrode,, lead oxide,is deposited at a substrate temperature higher than the crystallization temperature of lead titanate using the sputtering method. Lead zirconate titanate,is then deposited at a substrate temperature higher than the aforementioned substrate temperature using the sputtering temperature. Afterwards, a heat treatment of the deposited film is performed to produce PZT film