The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Feb. 15, 1996
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for forming a PZT strong dielectric film by the sol-gel technique, in which the thickness of the film is substantially no greater than 1000 .ANG.. In another aspect, the drying temperature of the raw material sol-gel solution for forming the PZT dielectric film is maintained within the range of 130.degree.-200.degree. C., and is particularly set lower than the boiling point of the stabilizer contained in the sol-gel raw material and higher than the boiling point of the solvent contained in the sol-gel raw material. As a result of performing the oxidative sintering treatment at a temperature at which perovskite crystals form, it becomes possible to readily form thin films exhibiting a (100) crystal orientation in particular. Additionally, completely crack-free thick films can be formed.