The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Dec. 31, 1998
Applicant:
Inventors:
Akitoshi Nishimura, Plano, TX (US);
Katsuhiro Aoki, Ibaraki, JP;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/122 ;
U.S. Cl.
CPC ...
G11C 1/122 ;
Abstract
An FeRAM in which sensing occurs without a dummy cell, using an unselected bitline as a reference. The read cycle includes two opposed pulses on the drive line: the first pulse provides a data-dependent signal out of the selected cell, and the second pulse restores the bit line to a level such that the DC bias voltage on an unselected bitline provides an optimal reference.
Nishimura, Akitoshi. (2002). Ferroelectric memory with bipolar drive pulses (U.S. Patent No. 6363002). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6363002
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile