This inventor holds 1 USPTO granted patent. Top assignee: Asm Japan K.k.. Active years: 2012.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2012
Title: Akira Shimuzu: Innovator in Semiconductor Technology
Introduction
Akira Shimuzu is a notable inventor based in Sagamihara, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in forming dielectric films.
Latest Patents
Shimuzu holds a patent for a method of forming stress-tuned dielectric films having Si-N bonds by modified plasma enhanced atomic layer deposition (PEALD). This method involves introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space where a semiconductor substrate is placed. By applying RF power using both high frequency and low frequency RF power sources, and introducing a hydrogen-containing silicon precursor in pulses, a stress-tuned dielectric film with Si-N bonds is formed on the substrate.
Career Highlights
Akira Shimuzu is currently employed at Asm Japan K.K., where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.
Collaborations
Shimuzu collaborates with talented professionals in his field, including Woo-Jin Lee and Kuo-Wei Hong. Their combined expertise contributes to the innovative projects at Asm Japan K.K.
Conclusion
Akira Shimuzu's contributions to semiconductor technology through his patented methods demonstrate his commitment to innovation in the industry. His work continues to influence advancements in the field, showcasing the importance of research and development in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile