The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jul. 08, 2010
Woo-jin Lee, Tama, JP;
Kuo-wei Hong, Tama, JP;
Akira Shimuzu, Sagamihara, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate.