Iwate, Japan

Akira Matsubara

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akira Matsubara. Retrieved from https://idiyas.com/inventor/akira-matsubara-sdomjphk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Akira Matsubara: Deposition Technology Inventor

Introduction

Akira Matsubara is an inventor associated with Iwate, Japan, and Tokyo Electron Limited. Her work includes a patent for a deposition method and apparatus designed to process recessed features on a substrate.

Latest Patents

The provided information lists 1 patent for Matsubara: “Deposition Method and Deposition Apparatus.” The method prepares a substrate with a recess, supplies an organic raw material gas so it adsorbs to the recess, and then supplies an oxygen-containing gas to oxidize the adsorbed material. After oxidation, a first gas containing a dehydrating agent is supplied to the surface.

Career Highlights

Matsubara’s listed invention addresses deposition processes involving recessed substrate surfaces. The patent describes a sequence of gas-supply steps intended to support material processing within those recesses. She is associated with Tokyo Electron Limited, a company active in semiconductor manufacturing equipment.

Collaborations

The available information connects Matsubara’s patent work with Tokyo Electron Limited. No additional collaborators or institutional partnerships are specified in the provided data.

Conclusion

Akira Matsubara’s listed patent focuses on a staged deposition process for recessed substrate features, reflecting her contribution to semiconductor processing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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