Niigata, Japan

Akio Kasahara

This inventor holds 1 USPTO granted patent. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 1997.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: Akio Kasahara: Innovator in Semiconductor Technology

Introduction

Akio Kasahara is a prominent inventor based in Niigata, Japan. He is known for his significant contributions to semiconductor technology, particularly in the production of semiconductor substrates. His innovative methods have paved the way for advancements in the field.

Latest Patents

One of Akio Kasahara's notable patents is a method for producing a semiconductor substrate. This method addresses critical issues such as autodoping and slip dislocations in the substrate. The process involves forming a silicon nitride film on the backside of an n.sup.- -silicon substrate, epitaxially growing an n.sup.+ -buffer layer and a p.sup.+ -layer on the front side, and decreasing the thickness of the n.sup.- -silicon substrate from the backside. This patent showcases his expertise and commitment to improving semiconductor manufacturing processes. He holds 1 patent.

Career Highlights

Akio Kasahara has made significant strides in his career, working with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work has contributed to the company's reputation for innovation and quality in semiconductor materials.

Collaborations

Throughout his career, Akio has collaborated with esteemed colleagues such as Masatake Katayama and Isao Moroga. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Akio Kasahara's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods and collaborations highlight his dedication to advancing the field. His work continues to influence the semiconductor industry and inspire future innovations.

Profile summary based on public USPTO records.
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