The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 1997
Filed:
Aug. 28, 1995
Applicant:
Inventors:
Masatake Katayama, Gunma-ken, JP;
Isao Moroga, Gunma-ken, JP;
Isao Shirai, Gunma-ken, JP;
Youichi Kumaki, Nigata-ken, JP;
Akio Kasahara, Nigata-ken, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., , US;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437228 ; 437 86 ; 437226 ; 437234 ; 437974 ; 1566251 ; 1566531 ; 148D / ;
Abstract
A method for producing a semiconductor substrate in which no autodoping occurs and slip dislocations in the substrate are reduced. The method involves forming a silicon nitride film on the backside of an n.sup.- -silicon substrate, epitaxially growing an n.sup.+ -buffer layer and a p.sup.+ -layer on the front side of the n.sup.- -silicon substrate, and decreasing the thickness of the n.sup.- -silicon substrate from the backside.