Akihiro Matsuse

Title: Akihiro Matsuse: Innovator in SiC Single-Crystal Growth

Introduction

Akihiro Matsuse is a prominent inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor materials, particularly in the growth of silicon carbide (SiC) single crystals. With a total of 3 patents to his name, Matsuse's work is pivotal in advancing technology in this area.

Latest Patents

Matsuse's latest patents include innovative technologies such as a seed crystal for SiC single-crystal growth, a SiC single crystal, and a method for manufacturing the SiC single crystal. The seed crystal for SiC single-crystal growth features a facet formation region that contains a {0001}-plane uppermost portion and n (n≥3) planes that enclose the periphery of the facet formation region. The relationships represented by specific formulas ensure the effectiveness of the seed crystal in the growth process. Additionally, he has developed a shield member and an apparatus for growing single crystals, which includes a vessel for growth, a raw material storage part, and a heating apparatus designed to optimize the sublimation of raw materials.

Career Highlights

Throughout his career, Matsuse has worked with notable companies such as Showa Denko K.K. and Toyota Chuo Kenkyusho. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking advancements in the field.

Collaborations

Matsuse has collaborated with esteemed colleagues, including Itaru Gunjishima and Keisuke Shigetoh. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Akihiro Matsuse's contributions to the field of SiC single-crystal growth are invaluable. His patents and collaborations reflect his commitment to advancing semiconductor technology. His work continues to influence the industry and inspire future innovations.