Showa Denko K.k.

Denso Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Akihiro Matsuse

Hisayuki Miki

Yasushi Urakami

Kotaro Yano

Itaru Gunjishima

Gaku Oriji

Keisuke Shigetoh

A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n&#x3e;=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): B&#x3c;=cos(sin(2.3 degrees)/sin C), formula (b): B&#x3c;=cos(sin(2.3 degrees)/sin C), and formula (c): min(C)&#x3c;=20 degrees. In the formulas, Cis an offset angle of a k-th plane, Bis an angle defined by an offset downstream direction of the k-th plane and a (k&#x2212;1)-th ridge line, and Bis an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.

Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal

Provided is a shield member and an apparatus for growing a single crystal equipped with the shield member. Such a shield member includes: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part to support the substrate; and a heating apparatus positioned at a an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed. The shield member is configured such that the heat capacity thereof increases from the center to the outer periphery.

Shield member and apparatus for growing single crystal equipped with the same

There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (), a cathode electrode () that comes into ohmic contact with a main surface () of one side of the SiC semiconductor substrate (), a first semiconductor region () that is made of p type SiC formed in a main surface () of the other side of the SiC semiconductor substrate (), a second semiconductor region () that is made of an n type SiC formed in the main surface () of the other side, an ohmic junction layer () that comes into ohmic contact with the first semiconductor region (), and a Schottky junction layer () that comes into Schottky contact with the second semiconductor region (), wherein a root mean square roughness for a surface of the ohmic junction layer () is 20 nm or less.

Semiconductor device and manufacturing method of semiconductor device

Growing community of inventors

Nagoya, Japan

Akihiro Matsuse