Semiconductor device and manufacturing method of semiconductor device

Abstract

There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (), a cathode electrode () that comes into ohmic contact with a main surface () of one side of the SiC semiconductor substrate (), a first semiconductor region () that is made of p type SiC formed in a main surface () of the other side of the SiC semiconductor substrate (), a second semiconductor region () that is made of an n type SiC formed in the main surface () of the other side, an ohmic junction layer () that comes into ohmic contact with the first semiconductor region (), and a Schottky junction layer () that comes into Schottky contact with the second semiconductor region (), wherein a root mean square roughness for a surface of the ohmic junction layer () is 20 nm or less.