The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Oct. 29, 2013
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute-shi, Aichi-ken, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Showa Denko K.k., Tokyo, JP;
Itaru Gunjishima, Nagakute, JP;
Keisuke Shigetoh, Nagoya, JP;
Yasushi Urakami, Miyoshi, JP;
Akihiro Matsuse, Hikone, JP;
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute-shi, JP;
DENSO CORPORATION, Kariya-shi, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): B<=cos(sin(2.3 degrees)/sin C), formula (b): B<=cos(sin(2.3 degrees)/sin C), and formula (c): min(C)<=20 degrees. In the formulas, Cis an offset angle of a k-th plane, Bis an angle defined by an offset downstream direction of the k-th plane and a (k−1)-th ridge line, and Bis an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.