Abhijeet Paul

USPTO Granted Patents = 19 (Patent Applications = 4)

Average Co-Inventor Count = 2.6

ph-index = 5

Forward Citations = 60(Granted Patents)

Company Filing History:

Murata Manufacturing Co., Ltd.

patents

Years Active: 2018-2024

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19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12113069 - Thermal extraction of single layer transfer integrated circuits (2024-10-08),

2. 12100734 - Low leakage FET (2024-09-24),

3. 12062669 - SLT integrated circuit capacitor structure and methods (2024-08-13),

4. 12027623 - High voltage switching device (2024-07-02),

5. 11652112 - SLT integrated circuit capacitor structure and methods (2023-05-16),

6. 11469296 - Low leakage FET (2022-10-11),

7. 11437404 - Thermal extraction of single layer transfer integrated circuits (2022-09-06),

8. 11335704 - Low parasitic capacitance RF transistors (2022-05-17),

9. 11276749 - High density IC capacitor structure (2022-03-15),

10. 11133338 - SLT integrated circuit capacitor structure and methods (2021-09-28),

11. 10923592 - High voltage switching device (2021-02-16),

12. 10777636 - High density IC capacitor structure (2020-09-15),

13. 10756166 - Low leakage FET (2020-08-25),

14. 10672806 - High-Q integrated circuit inductor structure and methods (2020-06-02),

15. 10658386 - Thermal extraction of single layer transfer integrated circuits (2020-05-19),

Title: The Innovative Mind of Abhijeet Paul: Revolutionizing Semiconductor Technology

Introduction

Abhijeet Paul, a brilliant inventor based in Poway, CA (US), has made significant contributions to the field of semiconductor technology. With 15 patents to his name, he continues to push the boundaries of innovation at Psemi Corporation.

Latest Patents

One of Abhijeet Paul's latest patents is the "SLT integrated circuit capacitor structure and methods." This invention focuses on FET IC structures that facilitate the formation of integrated capacitors in a unique SOI IC structure, thereby reducing unwanted parasitic couplings. Additionally, his "Low leakage FET" design addresses the edge transistor phenomenon, ensuring low leakage in nFET designs.

Career Highlights

Abhijeet Paul's career is highlighted by his pioneering work at Psemi Corporation, where he has been instrumental in developing cutting-edge semiconductor technologies. His passion for innovation and dedication to his craft have resulted in numerous successful patent applications.

Collaborations

In his professional journey, Abhijeet Paul has collaborated with esteemed colleagues such as Alain Duvallet and Hiroshi Yamada. Their combined expertise has led to the creation of groundbreaking inventions and has cemented Abhijeet's reputation as a leader in the industry.

Conclusion

Abhijeet Paul's inventive spirit and unparalleled technical skills have propelled him to the forefront of semiconductor technology. His patents stand as a testament to his ingenuity and commitment to advancing the field. As he continues to explore new possibilities and drive innovation forward, the future looks brighter than ever in the capable hands of this visionary inventor.

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4 patents pending:

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