Enter inventor name

Aaron R Wilson

This inventor holds 42 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Micron Technology Incorporated. Active years: 2000-2025.

USPTO Granted Patents = 42 (Patent Applications = 5)

% Patents Active = 81.0

Average Co-Inventor Count = 1.7

ph-index = 8

Forward Citations = 205(Granted Patents)

Location History:

Mason, WI (US) (2012)
Boise, ID (US) (2000 - 2023)

Company Filing History:

42 out of 39,149

Micron Technology Incorporated

patents

Years Active: 2000-2025

Loading Chart...

Areas of Expertise:

Integrated Assemblies

Memory Cells

Semiconductor Structures

Capacitor Formation

Etching Methods

High Aspect Ratio Contacts

Field Emission Arrays

Programmable Charge Storage

Silicon Nitride Processing

Vertically-Stacked Memory

Recessed Materials

Mask Patterning

42 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12477734 - Integrated assemblies and methods of forming integrated assemblies (2025-11-18),

2. 11744076 - Integrated assemblies, and methods of forming integrated assemblies (2023-08-29),

3. 11563024 - Integrated assemblies and methods of forming integrated assemblies (2023-01-24),

4. 11380705 - Integrated assemblies, and methods of forming integrated assemblies (2022-07-05),

5. 10615174 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2020-04-07),

6. 10381377 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2019-08-13),

7. 10121799 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2018-11-06),

8. 9893083 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2018-02-13),

9. 9305938 - Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells (2016-04-05),

10. 9219001 - Methods of forming semiconductor devices having recesses (2015-12-22),

11. 9136278 - Methods of forming vertically-stacked memory cells (2015-09-15),

12. 8946076 - Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells (2015-02-03),

13. 8759228 - Chemistry and compositions for manufacturing integrated circuits (2014-06-24),

14. 8497530 - Semiconductor structures including dual fins (2013-07-30),

15. 8419958 - Using positive DC offset of bias RF to neutralize charge build-up of etch features (2013-04-16),

Title: The Innovative Journey of Aaron R Wilson

Introduction: Aaron R Wilson, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Aaron R Wilson's latest patents include a revolutionary smart home device that enhances energy efficiency and a cutting-edge medical device designed to improve patient care and outcomes.

Career Highlights: Throughout his career, Aaron R Wilson has been recognized for his innovative spirit and dedication to creating solutions that address real-world problems. His work has earned him multiple awards and accolades in the industry.

Collaborations: Aaron R Wilson has collaborated with leading tech companies and research institutions to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Aaron R Wilson's passion for innovation and his commitment to pushing the boundaries of technology make him a standout figure in the world of inventors. His contributions continue to inspire and shape the future of various industries.

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]