For the Inventor, By the Inventor

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Anyang-si, South Korea

Trinno Technology Co., Ltd.

USPTO Granted Patents = 3

Forward Citations = 1

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9 inventors (with patents filed for the assignee):

Chongman Yun (2 out of 8 patents)

Kwang Hoon Oh (2 out of 2 patents)

Soo Seong Kim (2 out of 2 patents)

4. Jin Young Jung (2 out of 3 patents)

5. Junyoung Choi (1 out of 64 patents)

6. Chong-man Yun (1 out of 14 patents)

7. Kwang-Hoon Oh (1 out of 7 patents)

8. Byoung-Ho Choo (1 out of 1 patent)

9. Soo-Seong Kim (1 out of 5 patents)

3 patents: Sort by Forward Citations

1. 12501636 - Power semiconductor device capable of controlling slope of current and voltage during dynamic switching (2025-12-16),

2. 12087848 - Power semiconductor device with reduced loss and manufacturing method the same (2024-09-10),

3. 8269304 - MOS gate power semiconductor device with anode of protection diode connected to collector electrode (2012-09-18),

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USPTO Data Jan 1 1976 - Dec 30 2025

3 Patents

#25 in Anyang-si

#2,648 in South Korea

Anyang-si, South Korea

Trinno Technology Co., Ltd.

Forward Citations = 1

9 inventors:

Chongman Yun (2 out of 8 patents)

Kwang Hoon Oh (2 out of 2 patents)

Soo Seong Kim (2 out of 2 patents)

4. Jin Young Jung (2 out of 3 patents)

5. Junyoung Choi (1 out of 64 patents)

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