The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Feb. 12, 2010
Applicants:
Kwang-hoon OH, Seoul, KR;
Byoung-ho Choo, Bucheon-si, KR;
Soo-seong Kim, Seoul, KR;
Chong-man Yun, Seoul, KR;
Inventors:
Kwang-Hoon Oh, Seoul, KR;
Byoung-Ho Choo, Bucheon-si, KR;
Soo-Seong Kim, Seoul, KR;
Chong-Man Yun, Seoul, KR;
Assignee:
Trinno Technology Co., Ltd., Anyang-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/761 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOS-gate power semiconductor device includes: a main device area including an active area and an edge termination area; and an auxiliary device area horizontally formed outside the main device area so as to include one or more diodes. Accordingly, it is possible to protect a circuit from an overcurrent and thus to prevent deterioration and/or destruction of a device due to the overcurrent.