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For the Inventor, By the Inventor

Hawthorne, CA, United States of America

Osi Optoelectronics, Inc.


USPTO Granted Patents = 26

% Expired Patents = 26.9


Trademarks = 1

Forward Citations = 163

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11 inventors (with patents filed for the assignee):

goldMedal Peter Steven Bui (22 out of 42 patents)

silverMedal Narayan Dass Taneja (21 out of 41 patents)

bronzeMedal Manoocher Mansouri Aliabadi (2 out of 4 patents)

4.  Nan-Ming Lai (2 out of 2 patents)

5.  Keith Fowler (2 out of 2 patents)

6.  Manoocher Mansouri (2 out of 4 patents)

7.  Alexander O Goushcha (1 out of 9 patents)

8.  Michael John Frick (1 out of 1 patent)

9.  Jean-Pierre Maufras (1 out of 1 patent)

10.  Teodor Petrea (1 out of 1 patent)

11.  Michel Chiasson (1 out of 1 patent)


Core Competencies:
Optical Rotary Sensor
Photoresistors
Shallow Junction Photodiode
Tetra-Lateral Position Sensing
Photodiode Array
Back-Side Illuminated
Wavelength Sensitive Sensors
Laser Rangefinder
Thin Active Layer
High Density Photodiodes
Edge Illuminated
Performance Characteristics

26 patents:

1. 11885614 - Optical rotary sensor (2024-01-30),
2. 10224449 - Photoresistors on silicon-on-insulator substrate and photodetectors incorporating same (2019-03-05),
3. 9691934 - Shallow junction photodiode for detecting short wavelength light (2017-06-27),
4. 9577121 - Tetra-lateral position sensing detector (2017-02-21),
5. 9276022 - Low crosstalk, front-side illuminated, back-side contact photodiode array (2016-03-01),
6. 9214588 - Wavelength sensitive sensor photodiodes (2015-12-15),
7. 9178092 - Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays (2015-11-03),
8. 9170096 - Laser rangefinder sensor (2015-10-27),
9. 9147777 - Tetra-lateral position sensing detector (2015-09-29),
10. 9035412 - Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same (2015-05-19),
11. 8912615 - Shallow junction photodiode for detecting short wavelength light (2014-12-16),
12. 8907440 - High speed backside illuminated, front side contact photodiode array (2014-12-09),
13. 8816464 - Photodiode and photodiode array with improved performance characteristics (2014-08-26),
14. 8796750 - Edge illuminated photodiodes (2014-08-05),
15. 8766392 - Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same (2014-07-01),
Osi Optoelectronics, Inc. is a leading provider of advanced optoelectronic components and systems, specializing in the design and manufacture of high-performance photonic devices. The company focuses on applications across various sectors, including telecommunications, industrial automation, and medical instrumentation. With a commitment to innovation, Osi Optoelectronics leverages cutting-edge technology to deliver solutions that enhance connectivity and efficiency in optoelectronic systems, serving clients primarily in the United States and globally.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Oct 6 2026

Osi Optoelectronics, Inc.
26 Patents

#4 in Hawthorne, CA

#3,039 in California

#12,850 in US

#24,781 in the World

Hawthorne, CA (US)
Hawthorne, CA, United States of America

Osi Optoelectronics, Inc.

Forward Citations = 163

11 inventors:

goldMedal Peter Steven Bui (22 out of 42 patents)

silverMedal Narayan Dass Taneja (21 out of 41 patents)

bronzeMedal Manoocher Mansouri Aliabadi (2 out of 4 patents)

4.  Nan-Ming Lai (2 out of 2 patents)

5.  Keith Fowler (2 out of 2 patents)

Please report any incorrect information to [email protected]
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