The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Jun. 06, 2016
Applicant:
Osi Optoelectronics, Inc., Hawthorne, CA (US);
Inventor:
Alexander O. Goushcha, Aliso Viejo, CA (US);
Assignee:
OSI Optoelectronics, Inc., Hawthorne, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/09 (2006.01); H01L 31/0203 (2014.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/09 (2013.01); H01L 31/0203 (2013.01); H01L 31/028 (2013.01); H01L 31/0216 (2013.01); H01L 31/0224 (2013.01); H01L 31/0352 (2013.01); H01L 31/03921 (2013.01); H01L 31/1804 (2013.01);
Abstract
A photoresistor comprises a silicon-on-insulator substrate () comprising a device layer (). In an example embodiment and mode at least two non-contiguous first highly conductive regions () of semiconductor material are formed on a surface of the device layer, and at least one active region () of a high resistivity semiconductor material of a same conductivity type as the first highly conductive regions are formed to propagate through a whole thickness of the device layer and to electrically contact the at least two non-contiguous first highly conductive regions.