The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Sep. 29, 2011
Applicants:

Peter Steven Bui, Westminster, CA (US);

Narayan Dass Taneja, Long Beach, CA (US);

Inventors:

Peter Steven Bui, Westminster, CA (US);

Narayan Dass Taneja, Long Beach, CA (US);

Assignee:

OSI Optoelectronics, Inc., Hawthorne, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1446 (2013.01); H01L 27/14643 (2013.01); H01L 31/02016 (2013.01); H01L 31/18 (2013.01); H01L 27/14689 (2013.01);
Abstract

The present application is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode includes a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+region through the wafer and a diffusion of an n+region through the wafer.


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