For the Inventor, By the Inventor

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Santa Clara, CA, United States of America

Kilopass Technologies, Inc.

USPTO Granted Patents = 17

Forward Citations = 1,050

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8 inventors (with patents filed for the assignee):

Jack Zezhong Peng (15 out of 43 patents)

David Fong (4 out of 19 patents)

Fei Ye (3 out of 8 patents)

4. Harry Luan (2 out of 65 patents)

5. Zhongshan Liu (2 out of 4 patents)

6. Michael David Fliesler (2 out of 12 patents)

7. Jianguo Wang (1 out of 6 patents)

8. Man Wang (1 out of 4 patents)

17 patents: Sort by Forward Citations

1. 8283731 - One-time programmable memory (2012-10-09),

2. 6992925 - High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline (2006-01-31),

3. 6972986 - Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown (2005-12-06),

4. 6956258 - Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric (2005-10-18),

5. 6940751 - High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown (2005-09-06),

6. 6924664 - Field programmable gate array (2005-08-02),

7. 6898116 - High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection (2005-05-24),

8. 6856540 - High density semiconductor memory cell and memory array using a single transistor (2005-02-15),

9. 6822888 - Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric (2004-11-23),

10. 6798693 - Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric (2004-09-28),

11. 6791891 - Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage (2004-09-14),

12. 6777757 - High density semiconductor memory cell and memory array using a single transistor (2004-08-17),

13. 6766960 - Smart card having memory using a breakdown phenomena in an ultra-thin dielectric (2004-07-27),

14. 6700151 - Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric (2004-03-02),

15. 6671040 - Programming methods and circuits for semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric (2003-12-30),

Company Overview

Kilopass Technologies, Inc., based in Santa Clara, California, specializes in non-volatile memory solutions, particularly in the realm of embedded memory technology. The company focuses on developing innovative memory products that enhance performance and efficiency for a variety of applications, including consumer electronics, automotive systems, and industrial devices. Kilopass is recognized for its contributions to the advancement of memory technology, enabling designers to optimize their products with reliable and scalable memory solutions.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

17 Patents

#190 in Santa Clara, CA

#4,518 in California

#18,903 in US

#35,948 in the World

Santa Clara, CA, United States of America

Kilopass Technologies, Inc.

Forward Citations = 1,050

8 inventors:

Jack Zezhong Peng (15 out of 43 patents)

David Fong (4 out of 19 patents)

Fei Ye (3 out of 8 patents)

4. Harry Luan (2 out of 65 patents)

5. Zhongshan Liu (2 out of 4 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Kilopass Technologies, Inc.. Retrieved from https://idiyas.com/company/kilopass-technologies

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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