For the Inventor, By the Inventor

Enter assignee name

Santa Clara, CA, United States of America

Kilopass Technologies, Inc.

USPTO Granted Patents = 17

Forward Citations = 1,050

Loading Chart...

Loading Chart...

8 inventors (with patents filed for the assignee):

Jack Zezhong Peng (15 out of 43 patents)

David Fong (4 out of 19 patents)

Fei Ye (3 out of 8 patents)

4. Harry Luan (2 out of 65 patents)

5. Zhongshan Liu (2 out of 4 patents)

6. Michael David Fliesler (2 out of 12 patents)

7. Jianguo Wang (1 out of 6 patents)

8. Man Wang (1 out of 4 patents)

17 patents: Sort by Forward Citations

1. 8283731 - One-time programmable memory (2012-10-09),

2. 6992925 - High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline (2006-01-31),

3. 6972986 - Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown (2005-12-06),

4. 6956258 - Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric (2005-10-18),

5. 6940751 - High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown (2005-09-06),

6. 6924664 - Field programmable gate array (2005-08-02),

7. 6898116 - High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection (2005-05-24),

8. 6856540 - High density semiconductor memory cell and memory array using a single transistor (2005-02-15),

9. 6822888 - Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric (2004-11-23),

10. 6798693 - Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric (2004-09-28),

11. 6791891 - Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage (2004-09-14),

12. 6777757 - High density semiconductor memory cell and memory array using a single transistor (2004-08-17),

13. 6766960 - Smart card having memory using a breakdown phenomena in an ultra-thin dielectric (2004-07-27),

14. 6700151 - Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric (2004-03-02),

15. 6671040 - Programming methods and circuits for semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric (2003-12-30),

Kilopass Technologies, Inc. is a leading provider of semiconductor logic non-volatile memory (NVM) intellectual property (IP) solutions. Their proprietary technologies offer a practical and reliable solution for the increasing demands for NVM in all electronic devices. Their customers include top-tier companies in various industries, such as consumer electronics, automotive, and industrial applications. Kilopass' dedicated team of experts continually strive to deliver innovative and secure solutions to meet the evolving needs of their clients.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 22 2026

17 Patents

#190 in Santa Clara, CA

#4,504 in California

#18,855 in US

#35,837 in the World

Santa Clara, CA, United States of America

Kilopass Technologies, Inc.

Forward Citations = 1,050

8 inventors:

Jack Zezhong Peng (15 out of 43 patents)

David Fong (4 out of 19 patents)

Fei Ye (3 out of 8 patents)

4. Harry Luan (2 out of 65 patents)

5. Zhongshan Liu (2 out of 4 patents)

Please report any incorrect information to [email protected]

Loading…