The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2005

Filed:

May. 30, 2003
Applicants:

Jack Zezhong Peng, San Jose, CA (US);

David Fong, Cupertino, CA (US);

Inventors:

Jack Zezhong Peng, San Jose, CA (US);

David Fong, Cupertino, CA (US);

Assignee:

Kilopass Technologies, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C011/34 ;
U.S. Cl.
CPC ...
Abstract

A programmable memory cell comprised of a transistor located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate formed from the column bitline and its source connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed n+region in the substrate underlying the gate of the transistor.


Find Patent Forward Citations

Peng, Jack. (2005). High density semiconductor memory cell and memory array using a single transistor (U.S. Patent No. 6856540). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6856540

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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