The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Oct. 17, 2001
Jack Zezhong Peng, San Jose, CA (US);
Kilopass Technologies, Inc., Sunnyvale, CA (US);
Abstract
A smart card having improved non-volatile memory and a processor. The memory includes of a plurality of memory cells. The semiconductor memory cells each have a data storage element constructed around an ultra-thin dielectric, such as gate oxide. The gate oxide is used to store information by stressing the ultra-thin dielectric into breakdown (soft or hard breakdown) to set the leakage current level of the memory cell. The memory cell is read be sensing the current drawn by the cell. A suitable ultra-thin dielectric is high quality gate oxide of about 50 angstroms thickness or less, as commonly available from presently available advance CMOS logic process.