For the Inventor, By the Inventor

Enter assignee name

Hsinchu, Taiwan

Excelliance Mos Corporation

USPTO Granted Patents = 44

Forward Citations = 54

Loading Chart...

Loading Chart...

24 inventors (with patents filed for the assignee):

Chu-Kuang Liu (14 out of 16 patents)

Pao-Chuan Lin (10 out of 27 patents)

Hung-Che Chou (9 out of 9 patents)

4. Ming-Hung Chien (6 out of 7 patents)

5. Ching-Tsan Lee (6 out of 26 patents)

6. Yi-Chi Chang (5 out of 5 patents)

7. Pei-Ting Yang (4 out of 4 patents)

8. Hung-Kun Yang (3 out of 4 patents)

9. Yung-Chen Lu (3 out of 3 patents)

10. Fu-Chun Huang (2 out of 27 patents)

11. Ke-Wei Wu (2 out of 2 patents)

12. Poyu Yang (2 out of 2 patents)

13. Li-Chieh Chen (2 out of 2 patents)

14. Su-Yuan Lin (2 out of 2 patents)

15. Chia-Lien Wu (2 out of 2 patents)

Core Competencies:

Split Gate Trench Device

Power MOSFET

Voltage Converting Circuit

Trench Power Semiconductor

Gallium Nitride Transistor

Power Conversion Apparatus

Control Circuit

Inrush Current Reduction

LED Driving Circuit

Semiconductor Structure

Power Supply Circuit

Buck Voltage Converter

44 patents: Sort by Forward Citations

1. 12751071 - Split gate trench device (2026-09-29),

2. 12689366 - Control device of power switch (2026-07-21),

3. 12414351 - Manufacturing method of split gate trench device (2025-09-09),

4. 12159914 - Trench power semiconductor device (2024-12-03),

5. 11588021 - Trench MOSFET and manufacturing method of the same (2023-02-21),

6. 11258438 - Control device of power switch (2022-02-22),

7. 10985032 - Power MOSFET (2021-04-20),

8. 10892675 - Voltage converting circuit and control circuit thereof (2021-01-12),

9. 10826491 - Control circuit for load switch (2020-11-03),

10. 10826288 - Power circuit for reducing inrush current (2020-11-03),

11. 10784336 - Gallium nitride high electron mobility transistor and gate structure thereof (2020-09-22),

12. 10693453 - Power switch circuit (2020-06-23),

13. 10468986 - Voltage converting apparatus for improve stability of the comparison opreration thereof (2019-11-05),

14. 10388784 - Power chip and structure of transistor (2019-08-20),

15. 10284102 - Power conversion apparatus (2019-05-07),

Company Overview

Excelliance Mos Corporation, headquartered in Hsinchu, Taiwan, specializes in the development and manufacturing of advanced semiconductor technologies. The company focuses on trench power semiconductor devices, including power MOSFETs and insulated gate bipolar transistors, which are essential for efficient power conversion applications. Additionally, Excelliance is engaged in the innovation of gallium nitride transistors and voltage converting circuits, catering to a diverse range of industries that require high-performance electronic components.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

44 Patents

#103 in Hsinchu

#443 in Taiwan

#15,738 in the World

Hsinchu, Taiwan

Excelliance Mos Corporation

Forward Citations = 54

24 inventors:

Chu-Kuang Liu (14 out of 16 patents)

Pao-Chuan Lin (10 out of 27 patents)

Hung-Che Chou (9 out of 9 patents)

4. Ming-Hung Chien (6 out of 7 patents)

5. Ching-Tsan Lee (6 out of 26 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Excelliance Mos Corporation. Retrieved from https://idiyas.com/company/excelliance-mos

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

Loading…