For the Inventor, By the Inventor

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Kabelsketal, Germany

Ce Cell Engineering Gmbh

USPTO Granted Patents = 4

EPO Patents = 1

Forward Citations = 3

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8 inventors (with patents filed for the assignee):

Hongming Zhao (3 out of 3 patents)

Zhao Hongming (1 out of 1 patent)

Christian Hagendorf (1 out of 2 patents)

4. Eckehard Hofmüller (1 out of 1 patent)

5. Stefan Stöckel (1 out of 1 patent)

6. Eve Krassowski (1 out of 1 patent)

7. Stephan Grosser (1 out of 1 patent)

8. Marko Turek (1 out of 1 patent)

4 patents: Sort by Forward Citations

1. 12389708 - Method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell (2025-08-12),

2. 11784263 - Method for improving ohmic-contact behaviour between a contact grid and a emitter layer of a silicon solar cell (2023-10-10),

3. 11482630 - Method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell (2022-10-25),

4. 11393944 - Method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell (2022-07-19),

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USPTO Data Jan 1 1976 - Dec 16 2025

4 Patents

#1 in Kabelsketal

#6,900 in Germany

Kabelsketal, Germany

Ce Cell Engineering Gmbh

Forward Citations = 3

8 inventors:

Hongming Zhao (3 out of 3 patents)

Zhao Hongming (1 out of 1 patent)

Christian Hagendorf (1 out of 2 patents)

4. Eckehard Hofmüller (1 out of 1 patent)

5. Stefan Stöckel (1 out of 1 patent)

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